IndiumV3, Main, Repository, bibRecord, 008712

Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy

Identifieur interne : 008712 ( Main/Repository ); précédent : 008711; suivant : 008713

Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy

Auteurs : RBID : Pascal:06-0118699

Descripteurs français

Pascal (Inist)
- Mesure optique, Indium nitrure, Epitaxie jet moléculaire, Monocristal, Polycristal, Couche nitrurée, Saphir, Silice, Verre, Luminescence, Bruit fond, Oxygène, Faisceau ionique.
Wicri :
- concept : Verre, Oxygène.

English descriptors

KwdEn :
- Background noise, Glass, Indium nitrides, Ion beam, Luminescence, Molecular beam epitaxy, Monocrystals, Nitrided layer, Optical measurement, Oxygen, Polycrystals, Sapphire, Silica.

Abstract

Single-crystalline and polycrystalline indium nitride films have been grown on (0001) sapphire and silica glass using plasma assisted molecular beam epitaxy (PAMBE). Optical measurements on the films revealed a luminescence feature in the vicinity of 0.8 eV for all films, both on sapphire and glass. No feature around 1.9 eV could be identified above the background noise. To our knowledge this is the first report of polycrystalline InN exhibiting the 0.8 eV feature. Ion beam analysis of the material could find no measurable oxygen contamination in the bulk of the films. These results, along with recent reports of blue shifting of the absorption onset of InN films with increasing oxygen content, appear to point towards oxygen contamination as being the source of the previously reported higher bandgap.

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Pascal:06-0118699

Le document en format XML

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<author><name sortKey="Anderson, P A" uniqKey="Anderson P">P. A. Anderson</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
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<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
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</author>
<author><name sortKey="Kendrick, C E" uniqKey="Kendrick C">C. E. Kendrick</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
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<sZ>3 aut.</sZ>
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<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kinsey, R J" uniqKey="Kinsey R">R. J. Kinsey</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
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<country>Nouvelle-Zélande</country>
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<author><name sortKey="Kennedy, V J" uniqKey="Kennedy V">V. J. Kennedy</name>
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<author><name sortKey="Markwitz, A" uniqKey="Markwitz A">A. Markwitz</name>
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<author><name sortKey="Reeves, R J" uniqKey="Reeves R">R. J. Reeves</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics and Astronomy, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
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<author><name sortKey="Durbin, S M" uniqKey="Durbin S">S. M. Durbin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
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<country>Nouvelle-Zélande</country>
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<publicationStmt><idno type="inist">06-0118699</idno>
<date when="2006">2006</date>
<idno type="stanalyst">PASCAL 06-0118699 INIST</idno>
<idno type="RBID">Pascal:06-0118699</idno>
<idno type="wicri:Area/Main/Corpus">009362</idno>
<idno type="wicri:Area/Main/Repository">008712</idno>
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<seriesStmt><idno type="ISSN">0964-1726</idno>
<title level="j" type="abbreviated">Smart mater. struc.</title>
<title level="j" type="main">Smart materials and structures</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Background noise</term>
<term>Glass</term>
<term>Indium nitrides</term>
<term>Ion beam</term>
<term>Luminescence</term>
<term>Molecular beam epitaxy</term>
<term>Monocrystals</term>
<term>Nitrided layer</term>
<term>Optical measurement</term>
<term>Oxygen</term>
<term>Polycrystals</term>
<term>Sapphire</term>
<term>Silica</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mesure optique</term>
<term>Indium nitrure</term>
<term>Epitaxie jet moléculaire</term>
<term>Monocristal</term>
<term>Polycristal</term>
<term>Couche nitrurée</term>
<term>Saphir</term>
<term>Silice</term>
<term>Verre</term>
<term>Luminescence</term>
<term>Bruit fond</term>
<term>Oxygène</term>
<term>Faisceau ionique</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term>
<term>Oxygène</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Single-crystalline and polycrystalline indium nitride films have been grown on (0001) sapphire and silica glass using plasma assisted molecular beam epitaxy (PAMBE). Optical measurements on the films revealed a luminescence feature in the vicinity of 0.8 eV for all films, both on sapphire and glass. No feature around 1.9 eV could be identified above the background noise. To our knowledge this is the first report of polycrystalline InN exhibiting the 0.8 eV feature. Ion beam analysis of the material could find no measurable oxygen contamination in the bulk of the films. These results, along with recent reports of blue shifting of the absorption onset of InN films with increasing oxygen content, appear to point towards oxygen contamination as being the source of the previously reported higher bandgap.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy</s1>
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<fA11 i1="01" i2="1"><s1>ANDERSON (P. A.)</s1>
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<fA11 i1="02" i2="1"><s1>KENDRICK (C. E.)</s1>
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<fA11 i1="06" i2="1"><s1>REEVES (R. J.)</s1>
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<fA11 i1="07" i2="1"><s1>DURBIN (S. M.)</s1>
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<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA14 i1="02"><s1>Institute of Geological and Nuclear Sciences</s1>
<s2>Lower Hutt</s2>
<s3>NZL</s3>
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<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Department of Physics and Astronomy, MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury</s1>
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<s5>354000134701910140</s5>
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<s1>© 2006 INIST-CNRS. All rights reserved.</s1>
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<fA47 i1="01" i2="1"><s0>06-0118699</s0>
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<fA60><s1>P</s1>
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<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Single-crystalline and polycrystalline indium nitride films have been grown on (0001) sapphire and silica glass using plasma assisted molecular beam epitaxy (PAMBE). Optical measurements on the films revealed a luminescence feature in the vicinity of 0.8 eV for all films, both on sapphire and glass. No feature around 1.9 eV could be identified above the background noise. To our knowledge this is the first report of polycrystalline InN exhibiting the 0.8 eV feature. Ion beam analysis of the material could find no measurable oxygen contamination in the bulk of the films. These results, along with recent reports of blue shifting of the absorption onset of InN films with increasing oxygen content, appear to point towards oxygen contamination as being the source of the previously reported higher bandgap.</s0>
</fC01>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Medida óptica</s0>
<s5>06</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>19</s5>
</fC03>
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<s5>19</s5>
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<s5>20</s5>
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<s5>20</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>21</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>21</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Couche nitrurée</s0>
<s5>22</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Nitrided layer</s0>
<s5>22</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Capa nitrurada</s0>
<s5>22</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Saphir</s0>
<s5>23</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Sapphire</s0>
<s5>23</s5>
</fC03>
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<s5>24</s5>
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<s5>25</s5>
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<s5>26</s5>
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<s5>26</s5>
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<s5>27</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Background noise</s0>
<s5>27</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Oxygène</s0>
<s2>NC</s2>
<s5>28</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Oxygen</s0>
<s2>NC</s2>
<s5>28</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Faisceau ionique</s0>
<s5>41</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Ion beam</s0>
<s5>41</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Haz iónico</s0>
<s5>41</s5>
</fC03>
<fN21><s1>072</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy

Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri